Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating Thereof

ABSTRACT

Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

This application is a continuation application of U.S. Pat. ApplicationSerial No. 17/383,687, filed Jul. 23, 2021, which is a non-provisionalapplication of and claims benefit of U.S. Provisional Pat. ApplicationSerial No. 63/161,687, filed Mar. 16, 2021, the entire disclosures ofwhich are incorporated herein by reference.

BACKGROUND

The electronics industry has experienced an ever-increasing demand forsmaller and faster electronic devices which are simultaneously able tosupport a greater number of increasingly complex and sophisticatedfunctions. Accordingly, there is a continuing trend in the semiconductorindustry to manufacture low-cost, high-performance, and low-powerintegrated circuits (ICs). Thus far these goals have been achieved inlarge part by scaling down semiconductor IC dimensions (e.g., minimumfeature size) and thereby improving production efficiency and loweringassociated costs. However, such scaling has also introduced increasedcomplexity to the semiconductor manufacturing process, such thatrealizing continued advances in ICs calls for similar advances insemiconductor manufacturing processes and technology.

As one example, semiconductor sensors are widely used for a variety ofapplications to measure physical, chemical, biological, and/orenvironmental parameters. Some specific types of semiconductor sensorsinclude gas sensors, pressure sensors, temperature sensors, and opticalimage sensors, among others. For optical image sensors, dark current isa major concern for performance and reliability. Dark current, which iscurrent that flows in the absence of light, can more generally bedescribed as leakage current present in an optical image sensor. In atleast some cases, poor quality of interfaces between varioussemiconductor layers used in optical image sensors and/or poor qualityof surfaces of the various semiconductor layers may result insignificant dark current. Another major concern for performance and/orreliability of optical image sensors is optical fill factor, whichgenerally indicates a ratio of a light sensitive area of a pixel (e.g.,a photodiode area) ratio to a total area of the pixel. Although existingoptical image sensors and methods for fabricating such have beengenerally adequate for their intended purpose, they have not beenentirely satisfactory in all respects.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIGS. 1A-1J are diagrammatic cross-sectional views of a photosensitivedevice, such as a germanium-based sensor with junction-gate field effecttransistor, in portion or entirety, at various fabrication stagesaccording to various aspects of the present disclosure.

FIG. 2 is a diagrammatic top view and a diagrammatic cross-sectionalview of a photosensitive device, such as the photosensitive device ofFIGS. 1A-1J, in portion or entirety, according to various aspects of thepresent disclosure.

FIGS. 3A-3J are diagrammatic cross-sectional views of a photosensitivedevice, such as a germanium-based sensor with junction-gate field effecttransistor, in portion or entirety, at various fabrication stagesaccording to various aspects of the present disclosure.

FIG. 4 is a diagrammatic top view and a diagrammatic cross-sectionalview of a photosensitive device, such as the photosensitive device ofFIGS. 3A-3J, in portion or entirety, according to various aspects of thepresent disclosure.

FIG. 5 is a diagrammatic cross-sectional view of a photosensitivedevice, such as a germanium-based sensor with junction-gate field effecttransistor, in portion or entirety, according to various aspects of thepresent disclosure.

FIG. 6 is a diagrammatic cross-sectional view of a photosensitivedevice, such as a germanium-based sensor with junction-gate field effecttransistor in portion or entirety, according to various aspects of thepresent disclosure.

FIG. 7 is a flow chart of a method for fabricating a photosensitivedevice, such as the photosensitive devices depicted in FIGS. 1A-1J, FIG.2 , FIGS. 3A-3J, FIG. 4 , FIG. 5 , and FIG. 6 , in portion or entirety,according to various aspects of the present disclosure.

DETAILED DESCRIPTION

The present disclosure relates generally to photosensitive devices, andmore particularly to, germanium-based photosensitive devices and methodsof fabrication thereof.

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,spatially relative terms, for example, “lower,” “upper,” “horizontal,”“vertical,” “above,” “over,” “below,” “beneath,” “up,” “down,” “top,”“bottom,” etc. as well as derivatives thereof (e.g., “horizontally,”“downwardly,” “upwardly,” etc.) are used for ease of description of thepresent disclosure of one features relationship to another feature. Thespatially relative terms are intended to cover different orientations ofthe device including the features. Furthermore, when a number or a rangeof numbers is described with “about,” “approximate,” and the like, theterm is intended to encompass numbers that are within a reasonable rangeconsidering variations that inherently arise during manufacturing asunderstood by one of ordinary skill in the art. For example, the numberor range of numbers encompasses a reasonable range including the numberdescribed, such as within +/-10% of the number described, based on knownmanufacturing tolerances associated with manufacturing a feature havinga characteristic associated with the number. For example, a materiallayer having a thickness of “about 5 nm” can encompass a dimension rangefrom 4.5 nm to 5.5 nm where manufacturing tolerances associated withdepositing the material layer are known to be +/-10% by one of ordinaryskill in the art. Still further, the present disclosure may repeatreference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

The present disclosure provides germanium-based photosensitive devicesand methods of fabrication thereof. The disclosed germanium-basedphotosensitive devices can reduce leakage current and/or dark currentfrom germanium photodiodes, improve optical fill factor, improveconversion gain, and/or reduce noise. An exemplary germanium-basedsensor includes a germanium photodiode and a junction field effecttransistor (JFET) formed from a germanium layer disposed in a siliconsubstrate, in some embodiments, or on a silicon substrate, in someembodiments. A doped silicon layer, which can be formed by in-situdoping epitaxially grown silicon, is disposed between the germaniumlayer and the silicon substrate. In embodiments where the germaniumlayer is on the silicon substrate, the doped silicon layer is disposedbetween the germanium layer and an oxide layer. The JFET has a dopedpolysilicon gate, and in some embodiments, a gate diffusion region isdisposed in the germanium layer under the doped polysilicon gate. Insome embodiments, a pinned photodiode passivation layer is disposed inthe germanium layer. In some embodiments, a pair of doped regions in thegermanium layer is configured as an e-lens of the germanium-basedsensor. The disclosed germanium-based photosensitive devices can beimplemented in indirect time-of-flight (iTOF) applications. For example,the exemplary germanium-based sensors can be a TOF sensor used in TOFapplications. Details of embodiments of the present disclosure aredescribed hereafter.

FIGS. 1A-1J are diagrammatic cross-sectional views of a photosensitivedevice 100, in portion or entirety, at various fabrication stagesaccording to various aspects of the present disclosure. FIGS. 1A-1J havebeen simplified for the sake of clarity to better understand theinventive concepts of the present disclosure. Additional features can beadded in photosensitive device 100, and some of the features describedcan be replaced, modified, or eliminated in other embodiments ofphotosensitive device 100.

Turning to FIG. 1A, fabrication begins with forming a silicon cavity ina silicon substrate in a device region of a photosensitive device. Forexample, photosensitive device 100 has a device region 102A and a deviceregion 102B and fabricating can begins with receiving a siliconsubstrate (wafer) 105, forming a patterned oxide layer 110 over siliconsubstrate 105, and forming cavities 115 (also referred to as trenches orrecesses) in silicon substrate 105 in device region 102A and deviceregion 102B using patterned oxide layer 110 as an etch mask. In someembodiments, patterned oxide layer 110 is formed by depositing an oxidelayer over silicon substrate 105, performing a lithography process toform a patterned resist layer over the oxide layer, and performing anetching process to transfer a pattern formed in the patterned resistlayer to the oxide layer, thereby forming patterned oxide layer 110.Patterned oxide layer 110 has an oxide layer portion 110A, an oxidelayer portion 110B, and an oxide layer portion 110C, where an opening112A that exposes silicon substrate 105 is formed by oxide layer portion110A and oxide layer portion 110B and an opening 112B that exposessilicon substrate 105 is formed by oxide layer portion 110B and oxidelayer portion 110C. Patterned oxide layer 110 has a thickness t1. Insome embodiments, thickness t1 is about 50 nm to about 90 nm. Thelithography process can include forming a resist layer on the oxidelayer (for example, by spin coating), performing a pre-exposure bakingprocess, performing an exposure process using a mask, performing apost-exposure baking process, and performing a developing process.During the exposure process, the resist layer is exposed to radiationenergy (such as ultraviolet (UV) light, deep UV (DUV) light, or extremeUV (EUV) light), where the mask blocks, transmits, and/or reflectsradiation to the resist layer depending on a mask pattern of the maskand/or mask type (for example, binary mask, phase shift mask, or EUVmask), such that an image is projected onto the resist layer thatcorresponds with the mask pattern. Since the resist layer is sensitiveto radiation energy, exposed portions of the resist layer chemicallychange, and exposed (or non-exposed) portions of the resist layer aredissolved during the developing process depending on characteristics ofthe resist layer and characteristics of a developing solution used inthe developing process. After development, the patterned resist layerincludes a resist pattern that corresponds with the mask. The etchingprocess uses the patterned resist layer as an etch mask to removeexposed portions of the oxide layer, thereby forming opening 112A andopening 112B that extend through the oxide layer and expose siliconsubstrate 105. The etching process can include a dry etching process, awet etching process, other suitable etching process, or combinationsthereof. After the etching process, the patterned resist layer can beremoved, for example, by a resist stripping process. In someembodiments, the patterned resist layer is removed, completely orpartially, during etching of the oxide layer and/or during etching ofsilicon substrate 105. In some embodiments, the exposure process canimplement maskless lithography, electron-beam writing, and/or ion-beamwriting.

An etching process is then performed using patterned oxide layer 110 asan etch mask to form cavities 115 in silicon substrate 105. For example,portions of silicon substrate 105 exposed by opening 112A and opening112B of patterned oxide layer 110 are removed by the etching process,thereby forming cavities 115 having bottoms and sidewalls formed bysilicon substrate 105. Cavities 115 have a depth D and a width W. Insome embodiments, depth D is about 900 nm to about 1,500 nm. In someembodiments, width W is about 2,000 nm to about 10,000 nm. In someembodiments, the etching process is configured to selectively removesilicon substrate 105 with respect to patterned oxide layer 110. Inother words, the etching process substantially removes silicon substrate105 but does not remove, or does not substantially remove, patternedoxide layer 110. For example, an etchant is selected for the etchprocess that etches silicon (i.e., silicon substrate 105) at a higherrate than silicon oxide (i.e., patterned oxide layer 110) (i.e., theetchant has a high etch selectivity with respect to silicon). Theetching process is a dry etching process, a wet etching process, othersuitable etching process, or combinations thereof.

Turning to FIG. 1B, a doped silicon layer is formed in and partiallyfill the silicon cavities. For example, doped silicon layers 120 areformed in and partially fill cavities 115. Doped silicon layers 120include n-type dopant (e.g., phosphorus, arsenic, other n-type dopant,or combinations thereof), p-type dopant (e.g., boron, indium, otherp-type dopant, or combinations thereof), or combinations thereof. Adopant concentration of doped silicon layers 120 is greater than adopant concentration of silicon substrate 105. In some embodiments,doped silicon layers 120 have a dopant concentration of about 5 × 10¹⁶atoms/cm³ (cm⁻³) to about 5 × 10¹⁸ cm⁻³. In some embodiments, siliconsubstrate 105 has a dopant concentration that is less than about 1 ×10¹⁵ cm⁻³. In some embodiments, doped silicon layers 120 include n-typedopant, such as phosphorous, and can be referred to as n-doped siliconlayers (e.g., Si:P layers or Si:C:P layers). In some embodiments, dopedsilicon layers 120 include p-type dopant, such as boron, and can bereferred to as p-doped silicon layers (e.g., Si:B layers). Doped siliconlayers 120 are disposed along and covers bottoms and sidewalls ofcavities 115. A thickness t2 of doped silicon layers 120 along bottomsof cavities 115 is less than depth D of cavities 115, and a totalthickness of doped silicon layers 120 along sidewalls of cavities 115(i.e., a sum of a thickness t3 along a first sidewall of a respectivesilicon cavity 115 and a thickness t4 along a second sidewall of arespective silicon cavity) is less than width W of cavities 115. In someembodiments, thickness t2, thickness t3, and thickness t4 aresubstantially the same, such that doped silicon layers 120 are conformallayers (i.e., a layer having a substantially uniform thickness overvarious surfaces). In some embodiments, thickness t2 is different thanthickness t3 and/or thickness t4. In some embodiments, thickness t3 issubstantially the same as thickness t4. In some embodiments, thicknesst3 is different than thickness t4. In some embodiments, thickness t2,thickness t3, and/or thickness t4 is about 10 nm to about 100 nm. In thedepicted embodiment, doped silicon layers 120 are substantiallyu-shaped. Doped silicon layers 120 can have different shapes dependingon a profile of cavities 115.

In some embodiments, doped silicon layers 120 are formed by a depositionprocess that selectively grows silicon on silicon substrate 105 withoutgrowing silicon on patterned oxide layer 110. For example, doped siliconlayers 120 are formed by epitaxially growing silicon from siliconsubstrate 105. An epitaxy process for forming doped silicon layers 120can implement chemical vapor deposition (CVD) deposition techniques (forexample, vapor-phase epitaxy (VPE), ultra-high vacuum CVD (UHV-CVD), lowpressure CVD (LPCVD), and/or plasma enhanced CVD (PECVD)), molecularbeam epitaxy, other suitable selective epitaxial growth (SEG) processes,or combinations thereof. The epitaxy process can use gaseous and/orliquid precursors, which include a silicon-containing precursor (forexample, silane (SiH₄), disilane (Si₂H₆), trisilane (Si₃H₈),dichlorosilane (DCS) (Si₂H₂Cl₂), other suitable silicon-containingprecursor, or combinations thereof) and a carrier precursor (forexample, a hydrogen precursor (e.g., H₂), an argon precursor (e.g., Ar),a helium precursor (e.g., He), a nitrogen precursor (e.g., N₂), a xenonprecursor, other suitable inert precursor, or combinations thereof). Inthe depicted embodiment, the epitaxy process further uses a dopantprecursor, such as phosphine (PH₃), arsine (AsH₃), diborane (B₂H₆),other suitable dopant-containing precursor, or combinations thereof.Epitaxially grown silicon is thus doped during deposition (i.e., in-situdoped). In some embodiments, epitaxially grown silicon is doped afterdeposition, for example, by an ion implantation process and/or adiffusion process. In some embodiments, a cleaning process and/or asurface treatment process (collectively referred to as a cleaningprocess) is performed before forming doped silicon layers 120 to removedefects from silicon substrate 105 and/or patterned oxide layer 110,such as any native oxide, contaminates, and/or other defects on siliconsubstrate 105 and/or patterned oxide layer 110. In some embodiments, thecleaning process is a baking process performed in an etchant-comprisingambient, where defects are removed (etched) from silicon substrate 105and/or patterned oxide layer 110 during the baking process. For example,a chlorine-based baking process, such as an HCl baking process, isperformed that can remove (clean) surface nucleation sites on patternedoxide layer 110.

Turing to FIG. 1C, a germanium layer is formed in and fills a remainderof the silicon cavity. For example, germanium layers 130 are formed inand fill remainders of cavities 115. Germanium layers 130 each have afirst portion wrapped by a respective doped silicon layer 120 and asecond portion disposed above doped silicon layer 120 and betweenrespective oxide layer portions of patterned oxide layer 110. Forexample, doped silicon layers 120 are disposed along bottoms andsidewalls of the first portions of germanium layers 130, while thesecond portions of germanium layers 130 cover top surfaces of sidewallportions of doped silicon layers 120 and contact oxide layer portion110A, oxide layer portion 110B, and/or oxide layer portion 110C. Thefirst portion has a thickness t5 that is less than depth D (e.g.,thickness t5 = depth D -thickness t2) and a width that is less thanwidth W (e.g., first portion width = width W -(thickness t3 + thicknesst4)), and the second portion has a thickness t6 and a width that isabout the same as width W. In some embodiments, thickness t5 is about900 nm to about 1,500 nm. Thickness t6 is less than thickness t1 ofpatterned oxide layer 110, such that germanium layers 130 partially fillopening 112A and opening 112B of patterned oxide layer 110 and adistance d1 is between top surfaces of germanium layers 130 and a topsurface of patterned oxide layer 110. In some embodiments, thickness t6is about 0 nm to about 10 nm. In some embodiments, distance d1is about 0nm to about 10 nm. In the depicted embodiment, germanium layers 130 arepure germanium layers. In some embodiments, germanium layers 130 areundoped (or unintentionally doped (UID)) (i.e., germanium layers 130 aresubstantially free of dopant). In some embodiments, germanium layers 130have a dopant concentration that is considered undoped. In someembodiments, germanium layers 130 are doped with n-type dopant (e.g.,phosphorous), p-type dopant (e.g., boron), or combinations thereof.

In some embodiments, germanium layers 130 are formed by a depositionprocess that selectively grows germanium on doped silicon layers 120without growing germanium on patterned oxide layer 110. For example,germanium layers 130 are formed by epitaxially growing germanium fromdoped silicon layers 120. An epitaxy process for forming germaniumlayers 130 can implement CVD deposition techniques (for example, VPE,UHV-CVD, LPCVD, and/or PECVD), molecular beam epitaxy, other suitableSEG processes, or combinations thereof. The epitaxy process can usegaseous and/or liquid precursors. For example, the epitaxy process usesa use a germanium-containing precursor (for example, germane (GeH₄),digermane (Ge₂H₆), germanium tetrachloride (GeCl₄), germanium dichloride(GeCl₂), other suitable germanium-containing precursor, or combinationsthereof) and a carrier precursor (for example, a hydrogen precursor(e.g., H2), an argon precursor (e.g., Ar), a helium precursor (e.g.,He), a nitrogen precursor (e.g., N₂), a xenon precursor, other suitableinert precursor, or combinations thereof). The epitaxy process isperformed until epitaxially grown germanium extends between respectiveoxide layer portions of patterned oxide layer 110 and covers topsurfaces of sidewall portions of doped silicon layers 120. In someembodiments, the epitaxy process is performed until epitaxially growngermanium fills opening 112A and opening 112B and, in some embodiments,extends a distance above the top surface of patterned oxide layer 110. Aplanarization process, such as a chemical mechanical polishing (CMP),can be performed to remove portions of epitaxially grown germaniumextending above and/or over the top surface of patterned oxide layer110, where patterned oxide layer 110 can function as a planarizationstop (i.e., the planarization process stops upon reaching patternedoxide layer 110). In some embodiments, the top surface of patternedoxide layer 110 and top surfaces of germanium layers 130 aresubstantially planar after the planarization process. An etch backprocess can be performed on germanium layers 130 to recess the topsurfaces of germanium layers 130 distance d1 from the top surface ofpatterned oxide layer 110. In some embodiments, the planarizationprocess recesses the epitaxially grown germanium relative to the topsurface of patterned oxide layer 110, such that the top surfaces ofgermanium layers 130 are distance d1 below the top surface of patternedoxide layer 110 after the planarization process. In such embodiments, anadditional etch back process may be unnecessary. In embodiments wheregermanium layers 130 are doped, the epitaxy process can use a dopantprecursor, such as those described herein, to in-situ dope theepitaxially grown germanium. In some embodiments, the epitaxially growngermanium is doped after deposition, for example, by an ion implantationprocess and/or a diffusion process. In some embodiments, a cleaningprocess is performed before forming germanium layers 130 to removedefects from doped silicon layers 120 and/or patterned oxide layer 110,such as any native oxide, contaminates, and/or other defects on dopedsilicon layers 120 and/or patterned oxide layer 110. In someembodiments, the cleaning process is a baking process, such as describedherein.

Turning to FIG. 1D, an undoped (or UID) cap layer is formed over thegermanium layer. For example, cap layers 135 are formed over germaniumlayers 130. In the depicted embodiment, cap layers 135 are undopedsilicon layers (i.e., silicon layers that are substantially free ofdopant, such as n-type dopant (e.g., phosphorous) or p-type dopant(e.g., boron)). In some embodiments, cap layers 135 having a dopantconcentration that is considered undoped. Cap layers 135 fill remaindersof openings in patterned oxide layer 110, such as opening 112A andopening 112B. In the depicted embodiment, a first one of cap layers 135is disposed between oxide layer portion 110A and oxide layer portion110B, and a second one of cap layers 135 is disposed between oxide layerportion 110B and oxide layer portion 110C. Cap layers 135 have athickness t7, which is less than thickness t1 of patterned oxide layer110, and a width that is about the same as width W. In some embodiments,thickness t7 is about 10 nm to about 50 nm. In some embodiments,thickness t7 is substantially equal to distance d1. In some embodiments,cap layers 135 are formed by a deposition process that selectively growssilicon on germanium layers 130 without growing silicon on patternedoxide layer 110. For example, cap layers 135 are formed by epitaxiallygrowing silicon from germanium layers 130. An epitaxy process forforming cap layers 135 can implement CVD deposition techniques (forexample, VPE, UHV-CVD, LPCVD, and/or PECVD), molecular beam epitaxy,other suitable SEG processes, or combinations thereof. The epitaxyprocess can use gaseous and/or liquid precursors, such as asilicon-containing precursor and a carrier precursor, such as thosedescribed herein. The epitaxy process is performed until epitaxiallygrown silicon fills opening 112A and opening 112B of patterned oxidelayer 110. In some embodiments, the epitaxially grown silicon mayoverfill opening 112A and opening 112B, such that the epitaxially grownsilicon extends above the top surface of patterned oxide layer 110. Insuch embodiments, a planarization process, such as CMP, can be performedto remove portions of epitaxially grown silicon extending above and/orover the top surface of patterned oxide layer 110, where patterned oxidelayer 110 can function as a planarization stop. In some embodiments, thetop surface of patterned oxide layer 110 and top surfaces of cap layers135 are substantially planar after the planarization process. In someembodiments, cap layers 135 are formed by depositing an undopedsemiconductor layer over patterned oxide layer 110, doped silicon layers120, and germanium layers 130, where the undoped semiconductor layerfills remainders of opening 112A and opening 112B, and then, performinga planarization process to remove the undoped semiconductor layer formedover the top surface of patterned oxide layer 110. In some embodiments,a cleaning process is performed before forming cap layers 135 to removedefects from germanium layers 130 and/or patterned oxide layer 110, suchas any native oxide, contaminates, and/or other defects on germaniumlayers 130 and/or patterned oxide layer 110. In some embodiments, thecleaning process is a baking process, such as those described herein.

Turning to FIG. 1E, an oxide layer is formed over the photosensitivedevice. For example, an oxide layer 140 is formed over photosensitivedevice 100, such that oxide layer 140 covers device region 102A anddevice region 102B. In the depicted embodiment, oxide layer 140 coverspatterned oxide layer 110 and cap layers 135. Oxide layer 140 includesoxygen and, in some embodiments, another suitable constituent. Forexample, oxide layer 140 can include silicon and oxygen (e.g., SiO₂) andbe referred to as a silicon oxide layer. Oxide layer 140 has a thicknesst8. In some embodiments, thickness t8 is about 10 nm to about 20 nm. Anysuitable deposition process is implemented for forming oxide layer 140,such as CVD, physical vapor deposition (PVD), atomic layer deposition(ALD), high density plasma CVD (HDPCVD), metal organic CVD (MOCVD),remote plasma CVD (RPCVD), rapid thermal CVD (RTCVD), PECVD, plasmaenhanced ALD (PEALD), LPCVD, atomic layer CVD (ALCVD), atmosphericpressure CVD (APCVD), other suitable methods, or combinations thereof.In the depicted embodiment, oxide layer 140 is formed overphotosensitive device 100 by CVD.

Turning to FIG. 1F, various doped regions are formed in the undoped caplayer and/or the germanium layer of the device region of thephotosensitive device. For example, a pair of first type doped regions145, a pair of first type doped regions 150, a second type doped region155, and a first type doped region 160 are formed in a respective caplayer 135 and/or a respective germanium layer 130 of device region 102Aand device region 102B. In the depicted embodiment, first type dopedregions 145 and first type doped regions 160 are formed in cap layers135 and germanium layers 130, while first type doped regions 150 andsecond type doped regions 155 are formed in germanium layers 130. Firsttype doped regions 145, first type doped regions 150, and first typedoped regions 160 include a first type dopant. Second type doped regions155 include a second type dopant that is different than the first typedopant. Accordingly, first type doped regions 145 include first typedoped silicon portions (i.e., portions of cap layers 135) and first typedoped germanium portions (i.e., portions of germanium layers 130), firsttype doped regions 150 include first type doped germanium portions(i.e., portions of germanium layers 130), second type doped regions 155include second type doped germanium portions (i.e., portions ofgermanium layers 130), and first type doped regions 160 include firsttype doped silicon portions (i.e., portions of cap layers 135) and firsttype doped germanium portions (i.e., portions of germanium layers 130).In some embodiments, the first type dopant is an n-type dopant (e.g.,phosphorous), and the second type dopant is a p-type dopant (e.g.,boron). In such embodiments, first type doped regions 145, first typedoped regions 150, and first type doped regions 160 are n-doped regions,and second type doped regions 155 are p-doped regions. In furtherance ofsuch embodiments, first type doped regions 145 can be referred to asgermanium n-wells (GNWs) and first type doped regions 150 can bereferred to as deep germanium n-wells (DGNWs). In some embodiments, thefirst type dopant is a p-type dopant, and the second type dopant is ann-type dopant. In such embodiments, first type doped regions 145, firsttype doped regions 150, and first type doped regions 160 are p-dopedregions, and second type doped regions 155 are n-doped regions. Infurtherance of such embodiments, first type doped regions 145 can bereferred to as germanium p-wells (GPWs) and first type doped regions 150can be referred to as deep germanium p-wells (DGPWs). A dopantconcentration of first type doped regions 150 is greater than a dopantconcentration of first type doped regions 145 and less than a dopantconcentration of first type doped regions 160. A dopant concentration ofsecond type doped regions 155 is less than first type doped regions 160,greater than a dopant concentration of first type doped regions 145, andgreater than a dopant concentration of first type doped regions 150. Adopant concentration of first type doped regions 145 is less than adopant concentration of first type doped regions 160. In someembodiments, first type doped regions 145 have a dopant concentration ofabout 1 × 10¹⁴ cm⁻³ to about 9 × 10¹⁵ cm⁻³. In some embodiments, firsttype doped regions 150 have a dopant concentration of about 1 × 10¹⁷cm⁻³ to about 9 × 10¹⁸ cm⁻³. In some embodiments, second type dopedregions 155 have a dopant concentration of about 1 × 10¹⁷ cm⁻³ to about9 × 10¹⁸ cm⁻³. In some embodiments, first type doped regions 160 have adopant concentration of about 1 × 10¹⁹ cm⁻³ to about 9 × 10²⁰ cm⁻³.

First type doped regions 145 extend from top surfaces of cap layers 135to a depth D1 in germanium layers 130. First type doped regions 150 aredisposed in germanium layers 130 at a depth D2, extending from depth D2to depth D1 (which is greater than D2) in germanium layer 130. Secondtype doped regions 155 are disposed in germanium layers 130 at a depthD3, extending from depth D3 to depth D2 (which is greater than depth D3)in germanium layer 130. First type doped regions 160 extend from topsurfaces of cap layers 135 to depth D3 in germanium layers 130. DepthD1, depth D2, and depth D3 are measured from top surfaces of germaniumlayers 130. In some embodiments, depth D1 is about 100 nm to about 200nm. In some embodiments, depth D2 is about 60 nm to about 90 nm. In someembodiments, depth D3 is about 10 nm to about 20 nm. First type dopedregions 160 are disposed over second type doped regions 155, where p-njunctions are formed by interfaces between first type doped regions 160and second type doped region 155. Second type doped regions 155 arefurther disposed between first type doped regions 145, where p-njunctions are formed by interfaces between second type doped regions 155and first type doped regions 145. First type doped regions 160 are alsodisposed between first type doped regions 145, where interfaces arebetween first type doped regions 160 and first type doped regions 145.First type doped regions 150 extend under second type doped regions 155,where p-n junctions are formed by interfaces between first type dopedregions 150 and second type doped regions 155. First type doped regions145 are disposed along doped silicon layers 120 and overlap an entirewidth of first type doped regions 150. In some embodiments, first typedoped regions 145 extend a depth into germanium layers 130 that is lessthan depth D1, such that first type doped regions 145 partially overlapfirst type doped regions 150 along their width. First type doped regions145 have a thickness t9 and a width W1, first type doped regions 150have a thickness t10 and a width W2, second type doped regions 155 havea thickness t11 and a width W3, and first type doped regions 160 have athickness t12 and width W3. First type doped regions 145 disposed in arespective germanium layer 130 are separated by a spacing S1 (which, inthe depicted embodiment, is substantially equal to width W3) and firsttype doped regions 150 disposed in the respective germanium layer 130are separated by a spacing S2 (which, in the depicted embodiment, isless than width W3). In some embodiments, thickness t9 is about 85 nm toabout 200 nm. In some embodiments, thickness t10 is about 20 nm to about30 nm. In some embodiments, thickness t11 is about 60 nm to about 150nm. In some embodiments, thickness t12 is about 5 nm to about 20 nm. Insome embodiments, width W1 is about 400 nm to about 1,500 nm. In someembodiments, width W2 is about 800 nm to about 2,500 nm. In someembodiments, width W3 is about 3,000 nm to about 5,000 nm. In someembodiments, thickness t9 is a sum of thickness t7 and depth D1,thickness t10 is a difference of depth D1 and depth D2, thickness t11 isa difference of depth D2 and depth D3, and/or thickness t12 is a sum ofthickness t7 and depth D3.

The various doped regions can be formed in cap layers 135 and/orgermanium layers 130 by lithography processes, such as those describedherein, and implantation processes. For example, forming the variousdoped regions can include performing a first lithography process to forma first implant mask that exposes first areas of germanium layers 130and performing a first implantation process using the first implant maskto introduce first type dopant into the first areas of germanium layers130 to form first type doped regions 145; performing a secondlithography process to form a second implant mask that exposes secondareas of germanium layers 130 (which can partially overlap the firstareas) and performing a second implantation process using the secondimplant mask to introduce first type dopant into the second areas ofgermanium layers 130 to form first type doped regions 150; performing athird lithography process to form a third implant mask that exposes athird area of germanium layers 130 (which can partially overlap thesecond areas and span between the first areas) and performing a thirdimplantation process using the third implant mask to introduce secondtype dopant into the third area of germanium layers 130 to form secondtype doped regions 155; and performing a fourth lithography process toform a fourth implant mask that exposes a fourth area of germaniumlayers 130 (which can overlap an entirety of the third area) andperforming a fourth implantation process using the fourth implant maskto introduce first type dopant into the fourth area of germanium layers130 to form first type doped regions 160. In some embodiments, secondtype doped regions 155 and first type doped regions 160 are formed usingone lithography process, instead of two. For example, the fourthlithography process can be omitted, and both the third implantationprocess and the fourth implantation process can use the third implantmask to form second type doped regions 155 and first type doped regions,respectively. In such embodiments, parameters of the implantationprocesses, such as implant energy, implant dopant type, implant dosage,implant angle, and/or other suitable implant parameter, can be tuned toprovide second type doped regions 155 and first type doped regions 160in germanium layers 130. The present disclosure contemplates the first,second, third, and fourth lithography/implantation processes beingperformed in any order. In some embodiments, parameters of the first,second, third, and/or fourth implantation processes, such as implantenergy, implant dopant type, implant dosage, implant angle, and/or othersuitable implant parameter, are tuned to achieve desired depths, desireddopant concentrations, desired dimensions (e.g., thicknesses and/orwidths), and/or configurations of first type doped regions 145, firsttype doped regions 150, second type doped regions 155, and/or first typedoped regions 160.

Turing to FIGS. 1G-1J, doped polysilicon gates are formed over thegermanium layer and first type doped regions are formed in the germaniumlayer under the doped polysilicon gates by self-diffusion. In FIG. 1G,fabrication can include forming a patterned mask layer 170 over oxidelayer 140, where the patterned mask layer 170 has a gate opening 178Aand a gate opening 178B in device region 102A and device region 102Bthat expose oxide layer 140. Gate openings 178A and gate openings 178Bare located over second type doped regions 155 and first type dopedregions 160 formed in germanium layers 130. In the depicted embodiment,patterned mask layer 170 has a patterned dielectric layer 172 and apatterned oxide layer 175 disposed over patterned dielectric layer 172.Patterned dielectric layer 172 includes a dielectric material that issuitable for subsequently-formed gate spacers, such as a dielectricmaterial that includes silicon, oxygen, carbon, nitrogen, other suitableconstituent, or combinations thereof (e.g., silicon oxide, siliconnitride, silicon oxynitride, silicon carbide, silicon carbon nitride,silicon oxycarbide, and/or silicon oxycarbonitride). Patterned oxidelayer 175 includes a dielectric material that includes oxygen, and insome embodiments, another suitable constituent. In the depictedembodiment, patterned dielectric layer 172 includes silicon and nitrogenand can be referred to as a silicon nitride layer and patterned oxidelayer 175 includes silicon and oxygen and can be referred to as asilicon oxide layer. Patterned dielectric layer 172 has a thickness t13,which corresponds with a thickness of subsequently-formed gate spacers,and patterned oxide layer 175 has a thickness t14. In some embodiments,thickness t13 is about 30 nm to about 50 nm. In some embodiments,thickness t14 is about 20 nm to about 40 nm.

In some embodiments, patterned mask layer 170 is formed by depositing adielectric layer over oxide layer 140, depositing an oxide layer overthe dielectric layer, performing a lithography process to form apatterned resist layer over the oxide layer, and performing an etchingprocess to transfer a resist pattern formed in the patterned resistlayer to the oxide layer and the dielectric layer, thereby formingpatterned mask layer 170 having patterned dielectric layer 172 andpatterned oxide layer 175. The dielectric layer and the oxide layer aredeposited by CVD, PVD, ALD, HDPCVD, MOCVD, RPCVD, RTCVD, PECVD, PEALD,LPCVD, ALCVD, APCVD, other suitable methods, or combinations thereof.The lithography process can include forming a resist layer on the oxidelayer (for example, by spin coating), performing a pre-exposure bakingprocess, performing an exposure process using a mask, performing apost-exposure baking process, and performing a developing process, suchas described herein. The etching process uses the patterned resist layeras an etch mask to remove exposed portions of the oxide layer and thedielectric layer to form gate openings 178A and gate openings 178Btherein, which correspond with locations for subsequently-formed gatesof photosensitive device 100. The etching process includes a dry etchingprocess, a wet etching process, other suitable etching process, orcombinations thereof. In some embodiments, portions of the oxide layerare removed to form patterned oxide layer 175 using the patterned resistlayer as an etch mask and portions of the dielectric layer are removedto form patterned dielectric layer 172 using the patterned resist layerand/or patterned oxide layer 175 as an etch mask. In some embodiments,the etching process includes multiple steps, such as a first etch stepthat selectively etches the oxide layer and a second etch step thatselectively etches the dielectric layer (e.g., the first etch step andthe second etch step implement different etchants). In some embodiments,the oxide layer and the dielectric layer are removed using the sameetchant. In some embodiments, the etching process stops upon reachingoxide layer 140. In the depicted embodiment, the etching process,intentionally or unintentionally, etches and recesses exposed portionsof oxide layer 140 a distance d2, which provides oxide layer 140 with avarying thickness. For example, unexposed portions of oxide layer 140have thickness t1, and exposed portions of oxide layer 140 have athickness that is less than thickness t1 (for example, thickness ofexposed portions of oxide layer 140 = thickness t1 - distance d2). Insome embodiments, distance d2 is about 0 nm to about 5 nm. After theetching process, the patterned resist layer can be removed, for example,by a resist stripping process. In some embodiments, the patterned resistlayer is removed, completely or partially, during etching of the oxidelayer and/or the dielectric layer.

In FIG. 1H, fabrication can proceed with removing patterned oxide layer175 from photosensitive device 100 and forming a doped polysilicon layer180 over patterned dielectric layer 172, where doped polysilicon layer180 fills gate openings 178A and gate openings 178B. In someembodiments, patterned oxide layer 175 is removed by an etching process,such as a dry etching process, a wet etching process, other suitableetching process, or combinations thereof. The etching process isconfigured to selectively remove patterned oxide layer 175 with respectto patterned dielectric layer 172. In other words, the etching processsubstantially removes patterned oxide layer 175 but does not remove, ordoes not substantially remove, patterned dielectric layer 172. Forexample, an etchant is selected for the etch process that etches siliconoxide (i.e., patterned oxide layer 175) at a higher rate than siliconnitride (i.e., patterned dielectric layer 172) (i.e., the etchant has ahigh etch selectivity with respect to silicon oxide). In the depictedembodiment, a selective wet etching process removes patterned oxidelayer 175 using a diluted hydrofluoric acid (DHF) solution. In someembodiments, a selective wet etching process removes patterned oxidelayer 175 using a buffered oxide etch (BOE) solution.

Doped polysilicon layer 180 is formed by depositing a polysiliconmaterial over patterned dielectric layer 172 by CVD, PVD, ALD, HDPCVD,MOCVD, RPCVD, RTCVD, PECVD, PEALD, LPCVD, ALCVD, APCVD, other suitablemethods, or combinations thereof. In the depicted embodiment, dopant isintroduced into the polysilicon material during the depositing (i.e.,in-situ). In some embodiments, dopant is introduced into the polysiliconmaterial after the depositing (e.g., by an implantation process). Insome embodiments, doped polysilicon layer 180 includes n-type dopant,such as phosphorous, and can be referred to as an n-doped polysiliconlayer. In some embodiments, doped polysilicon layer 180 includes p-typedopant, such as boron, and can be referred to as a p-doped polysiliconlayer. In some embodiments, doped polysilicon layer 180 has a dopantconcentration of about 1 × 10¹⁹ cm⁻³ to about 1 × 10²¹ cm⁻³. Dopedpolysilicon layer 180 covers a top surface of patterned dielectric layer172, fills gate openings 178A and gate openings 178B, and physicallycontacts oxide layer 140. A portion of doped polysilicon layer 180 overthe top surface of patterned dielectric layer 172 has a thickness t15.In some embodiments, thickness t15 is about 80 nm to about 120 nm.Portions of doped polysilicon layer 180 that fill gate openings 178A,178B have a thickness that is less than a sum of thickness t13 ofpatterned dielectric layer 172 and thickness t1 of oxide layer 140(e.g., thickness = thickness t13 + distance d2).

In FIG. 1I, fabrication can proceed with performing a patterning processon doped polysilicon layer 180 and patterned dielectric layer 172,thereby forming polysilicon gates 180A and polysilicon gates 180B fromdoped polysilicon layer 180 and gate spacers 184 from patterneddielectric layer 172. Polysilicon gates 180A and polysilicon gates 180Bhave first portions disposed between respective gate spacers 184 andsecond portions disposed over and covering top surfaces of respectivegate spacers 184. The first portions have a thickness t16 and a widthW4, and the second portions have a thickness t17 and a width W5 that isgreater than width W4. In some embodiments, width W4 is about 200 nm toabout 600 nm. In some embodiments, width W5 is about 30 nm to about 50nm. In some embodiments, thickness t16 is about equal to thickness t13of patterned dielectric layer 172. In some embodiments, thickness t17 isabout equal to thickness t15. In some embodiments, thickness t17 is lessthan thickness t15. Gate spacers 184 are disposed along sidewalls of thefirst portions of polysilicon gates 180A and sidewalls of the firstportions of polysilicon gates 180B. Gate spacers 184 have a height thatis about equal to thickness t16 and a width W6, which is about equal toa difference of width W5 and width W4 (e.g. width W6 = width W5 - widthW4).

In some embodiments, the patterning process includes performing alithography process to form a patterned resist layer over dopedpolysilicon layer 180 and performing an etching process to transfer aresist pattern formed in the patterned resist layer to doped polysiliconlayer 180, thereby forming polysilicon gates 180A and polysilicon gates180B. The lithography process can include forming a resist layer ondoped polysilicon layer 180 (for example, by spin coating), performing apre-exposure baking process, performing an exposure process using amask, performing a post-exposure baking process, and performing adeveloping process, such as described herein. The etching process usesthe patterned resist layer as an etch mask to remove exposed portions ofdoped polysilicon layer 180, such that unexposed, covered portions ofdoped polysilicon layer 180 remain to provide polysilicon gates 180A andpolysilicon gates 180B over oxide layer 140. The etching processincludes a dry etching process, a wet etching process, other suitableetching process, or combinations thereof. In some embodiments, portionsof doped polysilicon layer 180 are removed to form polysilicon gates180A and polysilicon gates 180B using the patterned resist layer as anetch mask and portions of patterned dielectric layer 172 are removed toform gate spacers 184 using the patterned resist layer and/orpolysilicon gates 180A and polysilicon gates 180B as an etch mask. Inembodiments where polysilicon gates 180A and polysilicon gates 180B areused as etch masks for etching patterned dielectric layer 172, theetching process may, intentionally or unintentionally, etch secondportions of polysilicon gates 180A and polysilicon gates 180B, such thatthickness t17 is less than thickness t15. In some embodiments, theetching process includes multiple steps, such as a first etch step thatselectively etches doped polysilicon layer 180 and a second etch stepthat selectively etches patterned dielectric layer 172 (e.g., the firstetch step and the second etch step implement different etchants). Theetching process is configured to selectively remove doped polysiliconlayer 180 and/or patterned dielectric layer 172 with respect to oxidelayer 140. In other words, the etching process substantially removesdoped polysilicon layer 180 and/or patterned dielectric layer 172 butdoes not remove, or does not substantially remove, oxide layer 140. Forexample, an etchant is selected for the etch process that etches dopedpolysilicon (i.e., doped polysilicon layer 180) and/or silicon nitride(i.e., patterned dielectric layer 172) at a higher rate than siliconoxide (i.e., oxide layer 140) (i.e., the etchant has a high etchselectivity with respect to doped polysilicon and/or silicon nitride).In some embodiments, a mask layer is formed over doped polysilicon layer180 and the patterned resist layer is formed over the mask layer. Insuch embodiments, a first etching process may remove portions of themask layer to form a patterned mask layer, and a second etching processremoves portions of doped polysilicon layer 180 and/or patterneddielectric layer 172 using the patterned mask layer as an etch mask.After the etching process, the patterned resist layer can be removed,for example, by a resist stripping process. In some embodiments, thepatterned resist layer is removed, completely or partially, duringetching of doped polysilicon layer 180 and/or patterned dielectric layer172.

After forming polysilicon gates 180A and polysilicon gates 180B,fabrication can include performing a diffusion process to diffuse dopantform polysilicon gates 180A and polysilicon gates 180B into germaniumlayers 130, thereby forming first type doped regions 185 that connectpolysilicon gates 180A and polysilicon gates 180B to first type dopedregions 160 in germanium layers 130. First type doped regions 185 extendfrom polysilicon gates 180A and polysilicon gates 180B to a depth D4 ingermanium layers 130, such that first type doped regions 185 overlapfirst type doped regions 160. Depth D4 is measured from top surfaces ofgermanium layers 130, and in the depicted embodiment, is less than depthD3. First type doped regions 185 thus include first type doped siliconportions (i.e., portions of cap layers 135) and first type dopedgermanium portions (i.e., portions of germanium layers 130). In someembodiments, depth D4 is about 5 nm to about 10 nm. First type dopedregions 185 have a dopant concentration that is greater than a dopantconcentration of first type doped regions 160. In some embodiments,first type doped regions 185 have a dopant concentration of about 1 ×10¹⁹ cm⁻³ to about 9 × 10²⁰ cm⁻³. In some embodiments, first type dopedregions 185 include n-type dopant, such as phosphorous, and can bereferred to as n-doped germanium regions (Ge N+). In some embodiments,first type doped regions 185 include p-type dopant, such as boron, andcan be referred to as p-doped germanium regions (Ge P+). In the depictedembodiment, first type doped regions 185 have a width that is aboutequal to width W4. In some embodiments, first type doped regions 185have a width that is greater than or less than width W4. First typedoped regions 185 have a thickness t18. In some embodiments, thicknesst18 is about 30 nm to about 60 nm. In some embodiments, the diffusionprocess is an anneal process that drives dopant from polysilicon gates180A and polysilicon gates 180B into germanium layers 130 to form firsttype doped regions 185. In some embodiments, the anneal process exposespolysilicon gates 180A and polysilicon gates 180B to heat having atemperature of about 700° C. to about 850° C. In some embodiments, theanneal process is performed for about 30 minutes to about 120 minutes.Forming first type doped regions 185 by self-diffusion prevents damageto photosensitive device 100 that can arise when first type dopedregions 185 are formed by an implantation process, such as damage todoped regions (i.e., first type doped regions 145, first type dopedregions 150, second type doped regions 155, and/or first type dopedregions 160) in germanium layers 130 and/or damage to p-n junctions ingermanium layers formed by interfaces between the doped regions. Sincefirst type doped regions 185 are formed by self-diffusion of gates,first type doped regions 185 can alternatively be referred to as gatediffusion regions and/or diffusion regions.

Turing to FIG. 1J, additional doped regions are formed in the germaniumlayer. For example, second type doped regions 190 are formed ingermanium layers 130. Second type doped regions 190 extend a depth D5 ingermanium layers 130, such that second type doped regions 190 overlapfirst type doped regions 145, second type doped regions 155, and firsttype doped regions 160. Second type doped regions 190 overlap interfacesbetween first type doped regions 145 and first type doped regions 160and interfaces between first type doped regions 145 and second typedoped regions 155 (which interfaces form p-n junctions). Second typedoped regions 190 are spaced a distance from first type doped regions185. Depth D5 is measured from top surfaces of germanium layers 130, andin the depicted embodiment, is greater than depth D3 and less than depthD2. Second type doped regions 190 thus include second type doped siliconportions (i.e., portions of cap layers 135) and second type dopedgermanium portions (i.e., portions of germanium layers 130). In someembodiments, depth D5 is about 20 nm to about 40 nm. In someembodiments, such as depicted, second type doped regions 190 extend intooxide layer 140 and have second type doped oxide portions. Second typedoped regions 190 further have a width W7 and a thickness t19. In someembodiments, width W7 is about 30 nm to about 50 nm. In someembodiments, thickness t19 is about 300 nm to about 1,500 nm. Secondtype doped regions 190 have a dopant concentration that is greater thana dopant concentration of first type doped regions 145, second typedoped regions 155, and/or first type doped regions 160. In someembodiments, second type doped regions 190 have a dopant concentrationof about 1 x 10¹⁷ cm⁻³ to about 9 x 10¹⁸ cm⁻³. In some embodiments,second type doped regions 190 include p-type dopant, such as boron, andcan be referred to as p-doped germanium regions (Ge P+). In someembodiments, second type doped regions 190 include n-type dopant, suchas phosphorous, and can be referred to as n-doped germanium regions (GeN+).

First type doped regions 195 are also formed in germanium layers 130.First type doped regions 195 extend a depth D6 in germanium layers 130,such that first type doped regions 195 overlap first type doped regions160. First type doped regions 195 are located between respective firsttype doped regions 185 and spaced a distance from the respective firsttype doped regions 185. In some embodiments, the distance is about equalto width W6 of gate spacers 184. Depth D6 is measured from top surfacesof germanium layers 130, and in the depicted embodiment, is less thandepth D3. First type doped regions 195 thus include first type dopedsilicon portions (i.e., portions of cap layers 135) and first type dopedgermanium portions (i.e., portions of germanium layers 130). In someembodiments, depth D6 is about 5 nm to about 10 nm. First type dopedregions 195 further have a width W8 and a thickness t20. In someembodiments, width W8 is about equal to a spacing between polysilicongates 180A and polysilicon gates 180B. In some embodiments, width W8 isabout 2,000 nm to about 5,000 nm. In some embodiments, thickness t20 isabout 10 nm to about 20 nm. First type doped regions 195 have a dopantconcentration that is greater than a dopant concentration of first typedoped regions 160. In some embodiments, first type doped regions 195have a dopant concentration of about 1 x 10¹⁸ cm⁻³ to about 1 x 10²⁰cm⁻³. In some embodiments, first type doped regions 195 include n-typedopant, such as phosphorous, and can be referred to as n-doped germaniumregions. In some embodiments, first type doped regions 195 includep-type dopant, such as boron, and can be referred to as p-dopedgermanium regions.

In some embodiments, second type doped regions 190 are formed byperforming a lithography process to form an implant mask that exposesareas of germanium layers 130 that overlap interfaces between first typedoped regions 145 and first type doped regions 160 and/or interfacesbetween first type doped regions 145 and second type doped regions 155and performing an implantation process using the implant mask tointroduce second type dopant into the exposed areas of germanium layers130. In some embodiments, first type doped regions 195 are formed byperforming a lithography process to form an implant mask that exposesareas of germanium layers 130 between polysilicon gates 180A andpolysilicon gates 180B and performing an implantation process using theimplant mask to introduce first type dopant into the exposed areas ofgermanium layers 130. In some embodiments, first type doped regions 195are formed after second type doped regions 190. In some embodiments,first type doped regions 195 are formed before second type doped regions190. In some embodiments, an anneal process is performed after formingfirst type doped regions 195 and/or second type doped regions 190, forexample, to activate dopant therein and/or in other doped regions ofphotosensitive device 100, such as first type doped regions 145, firsttype doped regions 150, second type doped regions 155, first type dopedregions 160, and/or first type doped regions 185. In some embodiments,the anneal process is a rapid thermal anneal (RTA). In some embodiments,the anneal process exposes photosensitive device 100 to heat having atemperature of about 700° C. to about 900° C. In some embodiments, theanneal process is performed for about 10 seconds (s) to about 30 s.

FIG. 2 provides a diagrammatic top view and a diagrammaticcross-sectional view of one device region, such as device region 102A,of photosensitive device 100 along line A-A of the top view, in portionor entirety, after undergoing fabrication associated with FIGS. 1A-1Jand, in some embodiments, additional fabrication, according to variousaspects of the present disclosure. For ease of understanding, oxidelayer 140 and cap layer 135 are omitted from the top view of FIG. 2 .Device region 102A includes a germanium-based sensor having a germaniumphotodiode that can convert photons (e.g., electromagnetic radiation,such as light) into charge carriers (e.g., electrons and/or holes),which can be measured as current and/or voltage. The germaniumphotodiode is located in silicon substrate 105. For example, germaniumlayer 130 is wrapped by silicon substrate 105 (e.g., silicon substrate105 is disposed along sidewalls and bottoms of germanium layer 130), andgermanium layer 130 has a laterally diffused photodiode (LD-PD) formedtherein by p-n junctions between second type doped region 155 and firsttype doped regions 145, such as a p-n junction A (which can be referredto as a left p-n junction) and a p-n junction B (which can be referredto as a right p-n junction). A first, left floating voltage node (FN_L)and a second, right floating voltage node (FN_R) are connected torespective second type doped regions 190, such that p-n junction A andp-n junction B are electrically connected to first, left floatingvoltage node and second, right floating voltage node by respectivesecond type doped regions 190. Leakage current (also referred to as darkcurrent) from the germanium photodiode is reduced by inserting dopedsilicon layer 120 between germanium layer 130 and silicon substrate 105.In some embodiments, the leakage current can potentially be reduced byas much as 1000% compared to conventional germanium-based sensors, whichdo not have a doped silicon layer between a germanium photodiode and asilicon substrate. The germanium-based sensor in device region 102Afurther has a double-gate junction field effect transistor (JFET), whichimproves control of the germanium photodiode. For example, gates of thedouble-gate JFET are provided by polysilicon gate 180A (and underlyingfirst type doped region 185) and polysilicon gate 180B (and underlyingfirst type doped region 185), a channel of the double-gate JFET isprovided by second type doped region 155 (P-channel or N-channel (alsobe referred to as a channel layer and/or a JFET channel)), andsource/drain regions of the double-gate JFET are provided by second typedoped regions 190 (P+ regions or N+ regions (also referred to assource/drain regions). A first, left gate voltage node (JFETG_L) and asecond, right gate voltage node (JFETG_R) are connected to polysilicongate 180A and polysilicon gate 180B, respectively. In thegermanium-based sensor, first type doped region 160 functions as apassivation layer for the LD-PD, which reduces leakage current at asurface of the germanium photodiode, and first type doped region 195 isa pinned photodiode (PPD) (e.g., n-type PPD (NPPD) or p-type (PPPD))that provides additional passivation for the LD-PD, further reducingleakage current at the surface of the germanium photodiode. Further,first type doped regions 150 function as electron lenses (e-lenses) inthe germanium-based sensor, which increases optical fill factor (FF) ofthe germanium-based sensor. For example, first type doped regions 150(i.e., e-lenses) can effectively guide or direct light to the LD-PD aswell as metal light guiding structures, eliminating the need for thegermanium-based sensor to have backside metal light guiding structures(i.e., a metal grid over a back surface of silicon substrate 105 toguide the light to the LD-PD), which provides the germanium-based sensorwith a greater area upon which light can be guided to the LD-PD (andthus greater photosensitive area) compared to conventional sensors andthus improves optical fill factor. By reducing leakage current of thegermanium photodiode, increasing optical fill factor of the germaniumphotodiode, and/or improving control of the germanium photodiode withthe double-gate JFET, the germanium-based sensor with JFET exhibitsbetter sensitivity, better conversion gain, and/or less noise thanconventional germanium-based sensors. In some embodiments, thegermanium-based sensor with JFET is a hole-sensing sensor. In suchembodiments, first type doped regions 145, first type doped regions 150,first type doped regions 160, first type doped regions 185, and firsttype doped regions 195 are n-doped regions, while second type dopedregions 155 and second type doped regions 190 are p-doped regions. Infurtherance of such embodiments, polysilicon gates 180A and polysilicongates 180B are n-doped polysilicon gates. In some embodiments, thegermanium-based sensor with JFET is an electron-sensing sensor. In suchembodiments, first type doped regions 145, first type doped regions 150,first type doped regions 160, first type doped regions 185, and firsttype doped regions 195 are p-doped regions, while second type dopedregions 155 and second type doped regions 190 are n-doped regions. Infurtherance of such embodiments, polysilicon gates 180A and polysilicongates 180B are p-doped polysilicon gates. Different embodiments may havedifferent advantages, and no particular advantage is required of anyembodiment. FIG. 2 has been simplified for the sake of clarity to betterunderstand the inventive concepts of the present disclosure. Additionalfeatures can be added in device region 102A of photosensitive device100, and some of the features described below can be replaced, modified,or eliminated in other embodiments of device region 102A ofphotosensitive device 100.

FIGS. 3A-3J are diagrammatic cross-sectional views of a photosensitivedevice 200, such as a germanium-based sensor with junction-gate fieldeffect transistor, in portion or entirety, at various fabrication stagesaccording to various aspects of the present disclosure. For clarity andsimplicity, similar features of photosensitive device 100 in FIGS. 1A-1Jand photosensitive device 200 in FIGS. 3A-3J are identified by the samereference numerals. Fabrication of photosensitive device 200 in FIGS.3A-3J is similar in many respects to fabrication of photosensitivedevice 100 in FIGS. 1A-1J, except the germanium photodiode ofphotosensitive device 200 is fabricated and located on silicon substrate105, instead of in silicon substrate 105. For example, turning to FIG.3A, fabrication begins with receiving silicon substrate 105, depositingan oxide layer 205 over silicon substrate 105, and forming cavities 215in oxide layer 205. Oxide layer 205 includes oxygen and, in someembodiments, another suitable constituent. For example, oxide layer 205can include silicon and oxygen (e.g., SiO₂) and be referred to as asilicon oxide layer. Oxide layer 205 has a thickness t21, which in someembodiments, is substantially the same as a desired depth (e.g., depthD) of cavities 215. In some embodiments, thickness t21 is about 900 nmto about 1,500 nm. Any suitable deposition process is implemented forforming oxide layer 205, such as those described herein. Any suitablelithography process and etching process, such as those described herein,are implemented for patterning oxide layer 205 to form cavities 215. Incontrast to cavities 115, cavities 215 extend through oxide layer 205and expose silicon substrate 105, such that cavities 215 have sidewallsformed by oxide layer 205 and bottoms formed by silicon substrate 105.Turning to FIGS. 3B-3J, fabrication of photosensitive device 200 thenproceeds similar to photosensitive device 100, for example, by formingdoped silicon layers 120 that partially fill cavities 215 (FIG. 3B),forming germanium layers 130 over doped silicon layers 120 that fillremainders of cavities 215 (FIG. 3C), forming cap layers 135 overgermanium layers 130 (FIG. 3D), forming oxide layer 140 overphotosensitive device 200 (FIG. 3E), forming various doped regions ingermanium layers 130 (e.g., first type doped regions 145, first typedoped regions 150, second type doped regions 155, and first type dopedregions 160) (FIG. 3F), forming polysilicon gates 180A and polysilicongates 180B over germanium layers 130 (FIGS. 3G-3I), forming first typedoped regions 185 in germanium layers 130 (FIG. 31 ), and forming secondtype doped regions 190 and first type doped regions 195 in germaniumlayers 130 (FIG. 3J). In some embodiments, the deposition processimplemented to form doped silicon layers 120 in cavities 215 is anon-selective deposition process, for example, that can grow epitaxialsilicon from both silicon substrate 105 and oxide layer 205. FIGS. 3A-3Jhave been simplified for the sake of clarity to better understand theinventive concepts of the present disclosure. Additional features can beadded in photosensitive device 200, and some of the features describedbelow can be replaced, modified, or eliminated in other embodiments ofphotosensitive device 200.

FIG. 4 provides a diagrammatic top view and a diagrammaticcross-sectional view of one device region, such as device region 102A,of photosensitive device 200 along line A-A of the top view, in portionor entirety, after undergoing fabrication associated with FIGS. 3A-3Jand, in some embodiments, additional fabrication, according to variousaspects of the present disclosure. For ease of understanding, oxidelayer 140 is partially omitted and cap layer 135 is omitted from the topview of photosensitive device 200 in FIG. 4 . Device region 102A ofphotosensitive device 200 in FIG. 4 is similar in many respects todevice region 102A of photosensitive device 100 in FIG. 2 . For example,device region 102A includes a germanium-based sensor that is configuredto reduce leakage current of its germanium photodiode, increase opticalfill factor of its germanium photodiode, and/or improve control of itsgermanium photodiode with a double-gate JFET, such that thegermanium-based sensor exhibits better sensitivity than conventionalgermanium-based sensors. Further, in photosensitive device 200, leakagecurrent from the germanium photodiode is further reduced by isolatingsidewalls of the germanium photodiode with oxide layer 205. Differentembodiments may have different advantages, and no particular advantageis required of any embodiment. FIG. 4 has been simplified for the sakeof clarity to better understand the inventive concepts of the presentdisclosure. Additional features can be added in device region 102A ofphotosensitive device 200, and some of the features described below canbe replaced, modified, or eliminated in other embodiments of deviceregion 102A of photosensitive device 200.

FIG. 5 is a diagrammatic cross-sectional view of a photosensitive device300, in portion or entirety, according to various aspects of the presentdisclosure. For clarity and simplicity, similar features ofphotosensitive device 100 in FIGS. 1A-1J and photosensitive device 300in FIG. 5 are identified by the same reference numerals. Photosensitivedevice 300 is similar in many respects to photosensitive device 100,except first type doped regions 145 do not overlap first type dopedregions 150. For example, first type doped regions 145 extend to depthD2 in germanium layers 130, instead of depth D3 in germanium layers 130,such that first doped regions 145 and first type doped regions 150 haveinterfaces at depth D2 in germanium layers 130. FIG. 5 has beensimplified for the sake of clarity to better understand the inventiveconcepts of the present disclosure. Additional features can be added inphotosensitive device 300, and some of the features described below canbe replaced, modified, or eliminated in other embodiments ofphotosensitive device 300.

FIG. 6 is a diagrammatic cross-sectional view of a photosensitive device400, in portion or entirety, according to various aspects of the presentdisclosure. For clarity and simplicity, similar features ofphotosensitive device 200 in FIGS. 3A-3J and photosensitive device 400in FIG. 6 are identified by the same reference numerals. Photosensitivedevice 400 is similar in many respects to photosensitive device 200,except first type doped regions 145 do not overlap first type dopedregions 150. For example, first type doped regions 145 extend to depthD2 in germanium layers 130, instead of depth D3 in germanium layers 130,such that first doped regions 145 and first type doped regions 150 haveinterfaces at depth D2 in germanium layers 130. FIG. 6 has beensimplified for the sake of clarity to better understand the inventiveconcepts of the present disclosure. Additional features can be added inphotosensitive device 400, and some of the features described below canbe replaced, modified, or eliminated in other embodiments ofphotosensitive device 400.

FIG. 7 is a flow chart of a method 500 for fabricating a photosensitivedevice, such as those depicted in FIGS. 1A-1J, FIG. 2 , FIGS. 3A-3J,FIG. 4 , FIG. 5 , and FIG. 6 , in portion or entirety, according tovarious aspects of the present disclosure. Method 500 begins withforming a sensor cavity over a silicon substrate at block 505. Method500 proceeds with forming an in-situ doped silicon layer that partiallyfills and lines the sensor cavity at block 510, forming a germaniumlayer over the doped silicon layer that fills a remainder of the sensorcavity at block 515, forming a photodiode and a junction field effecttransistor that include the germanium layer (where the junction fieldeffect transistor has a polysilicon gate) at block 520, and forming apinned photodiode passivation layer in the germanium layer at block 525.In some embodiments, self-diffusion is used to form a diffusion regionunder the polysilicon gate. For example, method 500 includes performingan anneal process on the polysilicon gate. FIG. 5 has been simplifiedfor the sake of clarity to better understand the inventive concepts ofthe present disclosure. Additional steps can be provided before, during,and after method 500, and some of the steps described can be moved,replaced, or eliminated for additional embodiments of method 500.

The various doped regions described herein, such as first type dopedregions 145, first type doped regions 150, second type doped regions155, first type doped regions 160, first type doped regions 185, secondtype doped regions 190, and first type doped regions 195, can includeboth first type dopant and second type dopant, where a doped region isconsidered a first type doped region where a first type dopantconcentration of the first type dopant is greater than a second typedopant concentration of the second type dopant (and thus provides adoped region having a first conductivity) and a second type doped regionwhere the first type dopant concentration of the first type dopant isless than the second type dopant concentration of the second type dopant(and thus provides a doped region having a second conductivity).

The present disclosure provides for many different embodiments,including hole-sensing photosensitive devices and electron-sensingphotosensitive devices, such as those described herein. The disclosedphotosensitive devices have double-gate junction field effecttransistors to improve control and various doped regions to improveperformance, such as e-lenses for increasing optical fill factor, and/orchannel layer and/or passivation layers that reduce leakage current andthereby improve performance.

An exemplary photosensitive device includes a silicon substrate, agermanium layer disposed over the silicon substrate, and a doped siliconlayer disposed between the silicon substrate and the germanium layer.The photosensitive device further includes a first doped region, asecond doped region, and a third doped region disposed in the germaniumlayer. The first doped region is disposed between the second dopedregion and the third doped region. The first doped region includes afirst type dopant. The second doped region and the third doped regioninclude a second type dopant. The photosensitive device further includesa fourth doped region, a fifth doped region, and a sixth doped regiondisposed in the germanium layer. The fourth doped region overlaps afirst interface between the first doped region and the second dopedregion. The fifth doped region overlaps a second interface between thefirst doped region and the third doped region. The sixth doped region isdisposed over the first doped region and between the fourth doped regionand the fifth doped region. The fourth doped region and the fifth dopedregion include the first type dopant, and the sixth doped regionincludes the second type dopant. The photosensitive device furtherincludes a polysilicon gate disposed over the sixth doped region. Thepolysilicon gate includes the second type dopant. The photosensitivedevice further includes a seventh doped region disposed in the germaniumlayer under the polysilicon gate. The seventh doped region includes thesecond type dopant.

In some embodiments, the first type dopant is n-type dopant and thesecond type dopant is p-type dopant. In some embodiments, the first typedopant is p-type dopant and the second type dopant is n-type dopant. Insome embodiments, doped silicon layer is disposed between the siliconsubstrate and sidewalls of the germanium layer and between the siliconsubstrate and a bottom of the germanium layer. In some embodiments, thedoped silicon layer is further disposed between an oxide layer and thegermanium layer. In some embodiments, the doped silicon layer isdisposed between the oxide layer and sidewalls of the germanium layerand between the silicon substrate and a bottom of the germanium layer.

In some embodiments, the photosensitive device further includes aneighth doped region and a ninth doped region disposed in the germaniumlayer. The second doped region is disposed over the eighth doped region.The third doped region is disposed over the ninth doped region. Thefirst doped region is disposed over the eighth doped region and theninth doped region. The eighth and the ninth doped region include thesecond type dopant. In some embodiments, the second doped region and thethird doped region overlap the eighth doped region and the ninth dopedregion, respectively. In some embodiments, wherein the polysilicon gateis a first polysilicon gate and the photosensitive device furtherincludes a second polysilicon gate disposed over the sixth doped regionand an eighth doped region disposed in the germanium layer under thesecond polysilicon gate. The first polysilicon gate and the secondpolysilicon gate are disposed between the fourth doped region and thefifth doped region. The second polysilicon gate includes the second typedopant. The seventh doped region includes the second type dopant. Insuch embodiments, the photosensitive device can further include a ninthdoped region disposed in the germanium layer between the firstpolysilicon gate and the second polysilicon gate. The ninth doped regionincludes the second type dopant.

Another exemplary photosensitive device includes a silicon substrate anda germanium-based photodiode having a germanium layer disposed over thesilicon substrate. The germanium-based photodiode further has two firstdoped regions of a first conductivity type disposed in the germaniumlayer; two second doped regions of the first conductivity type disposedin the germanium layer over the two first doped regions, respectively; athird doped region of a second conductivity type disposed in thegermanium layer over the two first doped regions and between the twosecond doped regions; and a fourth doped region of the firstconductivity type disposed in the germanium layer over the third dopedregion. A doped silicon layer is disposed between and separates thesilicon substrate and the germanium layer of the germanium-basedphotodiode. The photosensitive device further includes two dopedpolysilicon gates disposed over the third doped region. The fourth dopedregion is disposed between the two doped polysilicon gates. In someembodiments, the first conductivity type is n-type and the secondconductivity type is p-type. In some embodiments, the first conductivitytype is p-type and the second conductivity type is n-type. In someembodiments, the photosensitive device further includes a silicon caplayer disposed over the germanium layer. In such embodiments, the twosecond doped regions and the fourth doped region are further disposed inthe silicon cap layer. In some embodiments, the photosensitive devicefurther includes two fifth doped regions of the first conductivity typedisposed in the germanium layer under the two doped polysilicon gates,respectively. In some embodiments, the photosensitive device furtherincludes an oxide layer disposed over the silicon substrate. In suchembodiments, the doped silicon layer is further disposed between andseparates the oxide layer and the germanium layer.

An exemplary method for forming a photosensitive device includes forminga sensor cavity over a silicon substrate, forming an in-situ dopedsilicon layer that partially fills and lines the sensor cavity, forminga germanium layer over the in-situ doped silicon layer that fills aremainder of the sensor cavity, and forming a photodiode and a junctionfield effect transistor that include the germanium layer. The junctionfield effect transistor has a polysilicon gate. In some embodiments,forming the junction field effect transistor includes performing adiffusion process to cause dopant to diffuse from the polysilicon gateinto the germanium layer. In some embodiments, forming the sensor cavityincludes etching the silicon substrate. In some embodiments, the methodincludes forming an oxide layer over the silicon substrate, whereforming the sensor cavity includes etching the oxide layer to expose thesilicon substrate.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for forming a photosensitive device, themethod comprising: forming a sensor cavity in a silicon substrate;forming a doped silicon layer and a germanium layer in the sensorcavity, wherein the doped silicon layer is disposed between the siliconsubstrate and the germanium layer; forming a first doped region, asecond doped region, a third doped region, and a fourth doped region inthe germanium layer, wherein the first doped region is between thesecond doped region and the third doped region, the fourth doped regionis over the first doped region, the first doped region includes a firsttype dopant, and the second doped region, the third doped region, andthe fourth doped region include a second type dopant; forming a gateover the germanium layer, wherein the gate is over the fourth dopedregion and the gate includes the second type dopant; and forming a fifthdoped region, a sixth doped region, and a seventh doped region in thegermanium layer, wherein the fifth doped region overlaps the first dopedregion and the second doped region, the sixth doped region overlaps thefirst doped region and the third doped region, the fourth doped regionis between the fifth doped region and the sixth doped region, theseventh doped region is under the gate, the fifth doped region and thesixth doped region include the first type dopant, and the seventh dopedregion includes the second type dopant.
 2. The method for forming thephotosensitive device of claim 1, wherein the forming the seventh dopedregion in the germanium layer includes diffusing dopant from the gateinto the germanium layer.
 3. The method for forming the photosensitivedevice of claim 1, further comprising forming an eighth doped region anda ninth doped region in the germanium layer, wherein the second dopedregion is over the eighth doped region, the third doped region is overthe ninth doped region, the first doped region is over the eighth dopedregion and the ninth doped region, and the eighth doped region and theninth doped region include the second type dopant.
 4. The method forforming the photosensitive device of claim 1, wherein the gate is afirst gate and the method further includes forming a second gate overthe fourth doped region and an eighth doped region in the germaniumlayer under the second gate, wherein the first gate and the second gateare disposed between the fifth doped region and the sixth doped region,and the second gate includes the second type dopant.
 5. The method forforming the photosensitive device of claim 4, further comprising forminga ninth doped region in the germanium layer between the first gate andthe second gate, wherein the ninth doped region includes the second typedopant.
 6. The method for forming the photosensitive device of claim 1,wherein the forming the germanium layer in the sensor cavity includesepitaxially growing a germanium material on the doped silicon layer andplanarizing the germanium material.
 7. The method for forming thephotosensitive device of claim 1, further comprising forming an undopedsilicon layer over the germanium layer.
 8. The method for forming thephotosensitive device of claim 1, wherein the first type dopant isn-type dopant and the second type dopant is p-type dopant.
 9. The methodfor forming the photosensitive device of claim 1, wherein the first typedopant is p-type dopant and the second type dopant is n-type dopant. 10.A method for forming a photosensitive device, the method comprising:forming an oxide layer over a silicon substrate; forming a sensor cavityin the oxide layer that exposes the silicon substrate; forming a dopedsilicon layer and a germanium layer in the sensor cavity, wherein thedoped silicon layer is disposed between the silicon substrate and thegermanium layer and between the oxide layer and the germanium layer;forming a first doped region, a second doped region, a third dopedregion, and a fourth doped region in the germanium layer, wherein thefirst doped region is between the second doped region and the thirddoped region, the fourth doped region is over the first doped region,the first doped region includes a first type dopant, and the seconddoped region, the third doped region, and the fourth doped regioninclude a second type dopant; forming a gate over the germanium layer,wherein the gate is over the fourth doped region and the gate includesthe second type dopant; and forming a fifth doped region, a sixth dopedregion, and a seventh doped region in the germanium layer, wherein thefifth doped region overlaps the first doped region and the second dopedregion, the sixth doped region overlaps the first doped region and thethird doped region, the fourth doped region is between the fifth dopedregion and the sixth doped region, the seventh doped region is under thegate, the fifth doped region and the sixth doped region include thefirst type dopant, and the seventh doped region includes the second typedopant.
 11. The method for forming the photosensitive device of claim10, further comprising forming an undoped silicon layer over thegermanium layer.
 12. The method for forming the photosensitive device ofclaim 10, wherein the first type dopant is n-type dopant and the secondtype dopant is p-type dopant.
 13. The method for forming thephotosensitive device of claim 10, wherein the first type dopant isp-type dopant and the second type dopant is n-type dopant.
 14. Themethod for forming the photosensitive device of claim 10, wherein theforming the seventh doped region in the germanium layer includesdiffusing dopant from the gate into the germanium layer.
 15. The methodfor forming the photosensitive device of claim 10, further comprisingforming an eighth doped region and a ninth doped region in the germaniumlayer, wherein the second doped region is over the eighth doped region,the third doped region is over the ninth doped region, the first dopedregion is over the eighth doped region and the ninth doped region, andthe eighth doped region and the ninth doped region include the secondtype dopant.
 16. A photosensitive device comprising: a semiconductorsubstrate; and a germanium-based sensor having: a germanium layerwrapped by a doped silicon layer, wherein the doped silicon layer isbetween and separates a bottom of the germanium layer and thesemiconductor substrate, a laterally-diffused photodiode having a firstp-n junction and a second p-n junction disposed in the germanium layer,a double-gate junction field effect transistor having a first doped gatestructure, a second doped gate structure, a first source/drain regiondisposed in the germanium layer, a second source/drain region disposedin the germanium layer, and a channel region that extends between thefirst source/drain region and the second source/drain region, wherein:the channel region extends under the first doped gate structure and thesecond doped gate structure; the first source/drain region is disposedover and connected to the first p-n junction and the second source/drainregion is disposed over and connected to the second p-n junction; andthe first doped gate structure and the second doped gate structure eachinclude a doped conductive layer disposed over a doped region in thegermanium layer.
 17. The photosensitive device of claim 16, wherein thedoped silicon layer is further between and separates sidewalls of thegermanium layer and the semiconductor substrate.
 18. The photosensitivedevice of claim 16, wherein the doped silicon layer is further betweenand separates sidewalls of the germanium layer and an oxide layer. 19.The photosensitive device of claim 16, further comprising an undopedsilicon layer disposed over a top of the germanium layer and an oxidelayer disposed over the undoped silicon layer, wherein the first dopedgate structure and the second doped gate structure are disposed in theoxide layer and the undoped silicon layer.
 20. The photosensitive deviceof claim 16, wherein the doped region in the germanium layer is a firstdoped region and the photosensitive device further comprises: a firstpassivation region disposed in the germanium layer, wherein the firstpassivation region is a second doped region that extends between thefirst source/drain region and the second source/drain region and thefirst doped region extends into the second doped region; and a secondpassivation region disposed in the germanium layer, wherein the secondpassivation region is a third doped region disposed between the firstdoped gate structure and the second doped gate structure and the thirddoped region extends into the second doped region.